Analytical Sciences

Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse

Quanli LIU,*1 Takao YASUI,*1,*2,*3 Kazuki NAGASHIMA,*2,*4 Takeshi YANAGIDA,*4,*5,*6 Masafumi HORIUCHI,*1 Zetao ZHU,*1 Hiromi TAKAHASHI,*1 Taisuke SHIMADA,*1 Akihide ARIMA,*1 and Yoshinobu BABA*1,*3,*7

*1 Department of Biomolecular Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
*2 Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
*3 Institute of Nano-Life-Systems, Institutes of Innovation for Future Society, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
*4 Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
*5 Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka-cho, Ibaraki, Osaka 567-0047, Japan
*6 Institute of Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
*7 Institute of Quantum Life Science, National Institutes for Quantum and Radiological Science and Technology, 4-9-1 Anagawa, Inage, Chiba 263-8555, Japan

A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current–voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an I_UV/I_dark of ∼100 to ultraviolet light irradiation.

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