Abstract − Analytical Sciences, 33(10), 1193 (2017).
Polycrystalline Boron-doped Diamond Electrolyte-solution-gate Field-effect Transistor Applied to the Measurement of Water Percentage in Ethanol
Yukihiro SHINTANI*,** and Hiroshi KAWARADA*,***
*School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
**R&D Department, Innovation Center, MK-Hdqrs, Yokogawa Electric Corporation, 2-9-32 Nakacho, Musashino, Tokyo 180-8750, Japan
***Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan
**R&D Department, Innovation Center, MK-Hdqrs, Yokogawa Electric Corporation, 2-9-32 Nakacho, Musashino, Tokyo 180-8750, Japan
***Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan
A polycrystalline diamond electrolyte-solution-gate field-effect transistor (BDD-SGFET) was successfully applied to the analysis of water content in ethanol. Due to the use of a no-gate-insulator FET, the developed sensor showed a four-times-faster response than the conventional Si-FET, and a ten-times-faster response than a glass electrode. The output voltage showed good linearity with respect to the water content. This result is of practical importance because the traditional water content measurement methods are impractical due to their slow response.
J-STAGE:
View this article in J-STAGE
Back to the Table of Contents
