Analytical Sciences

Structure of Ultra-Thin Diamond-Like Carbon Films Grown with Filtered Cathodic Arc on Si(001)

Alberto HERRERA-GOMEZ,*^1,*² Yongjian SUN,*³ Francisco-Servando AGUIRRE-TOSTADO,*^2,*⁴ Cherngye HWANG,*³ Pierre-Giovanni MANI-GONZALEZ,*¹ Eric FLINT,*³ Francisco ESPINOSA-MAGAÑA,*⁴ and Robert M. WALLACE*²

*1 CINVESTAV-Querétaro, Querétaro, Qro. 76010, México
*2 Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
*3 Hitachi Global Storage Technologies, San Jose, CA 95193, USA
*4 Centro de Investigación en Materiales Avanzados, Chihuahua, Chihuahua 31109, México

The structure of 3 nm and 15 nm diamond-like carbon films, grown on Si(001) by filtered cathodic arc, was studied by angle-resolved X-ray photoelectron spectroscopy (ARXPS) and transmission electron microscopy (TEM). The ARXPS data was deconvolved by employing simultaneous-fitting, which allowed for a clear deconvolution of the Si 2p and C 1s spectra into their different chemical contributions. An analysis of the take-off angle dependence of the peak intensities allowed for an independent identification of the physical origin of the chemical species. It was shown that the C 1s peak at 283.3 eV and the Si 2p peak at 99.6 eV correspond to SiC, and that the C/Si interface of the 3 nm film consists of a stoichiometric ∼1 nm SiC layer. To quantify the sp³-sp² ratio it was necessary to take into account not only their associated C 1s XPS-peak intensities, but also their take-off angle dependence. The thickness of the films obtained through ARXPS closely agrees with cross-sectional TEM images.

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