Abstract − Analytical Sciences, 26(12), 1215 (2010).
Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor
Karthikeyan KANDASAMY,* Mohana MARIMUTHU,* Gun Yong SUNG,** Chang Geun AHN,** and Sanghyo KIM*
*College of Bionanotechnology, Kyungwon University, San 65, Bokjeong dong, Sujeong gu, Seongnam si, Gyeonggi do 461-701, Republic of Korea
**BT Convergence Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea
**BT Convergence Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea
The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions.
J-STAGE:
View this article in J-STAGE
Back to the Table of Contents
