Abstract − Analytical Sciences, 16(5), 483 (2000).
Evaluation of the Electric Field above a Specimen Surface duringSIMS Analysis
Hideyuki YAMAZAKI* and Toshiyuki ENDA**
*Toshiba Corporation, Research and Development Center, 8, Shinsugita-cho, Isogo,Yokohama 235-8522, Japan
**Toshiba Corporation, Semiconductor Company, ULSI Device Engineering Laboratory,8, Shinsugita-cho, Isogo, Yokohama 235-8522, Japan
**Toshiba Corporation, Semiconductor Company, ULSI Device Engineering Laboratory,8, Shinsugita-cho, Isogo, Yokohama 235-8522, Japan
The electric field above specimen surfaces mounted in specimen holders was investigated. After confirming anagreement of the field distortion area obtained from SIMS experiments using a Cameca IMS-4f ion microscope andcomputer simulation, the field distortions above specimen surfaces of various types of holder were estimated. Twofindings were obtained: (i) the field distortion area near to the window edge of the holder increases along with an increasein the faceplate thickness of the holder, and (ii) a holder with a tapered faceplate produces a more uniform electric fieldthan does that with a right-angled window edge.
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